دیتاشیت NDT3055-VB
مشخصات دیتاشیت
| نام دیتاشیت |
NDT3055-VB
|
| حجم فایل |
74.52
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec NDT3055-VB
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
4W
-
Total Gate Charge (Qg@Vgs):
10nC@4.5V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
810pF@30V
-
Continuous Drain Current (Id):
4.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
100pF@30V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
76mΩ@10V,4A
-
Package:
SOT-223-4
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Manufacturer:
VBsemi Elec
